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International Journal of Scientific and Engineering Research
ISSN Online 2229-5518
ISSN Print: 2229-5518 6    
Website: http://www.ijser.org
scirp IJSER >> Volume 3,Issue 6,June 2012
Reduced SCEs in Fully Depleted Dual-Material Double-Gate (DMDG) SON MOSFET: Analytical Modeling and Simulation
Full Text(PDF, )  PP.144-148  
Saheli Sarkhel, Sounak Naha, Subir Kumar Sarkar
— Fully depleted, Double Gate (DG), Dual Material gate (DMG), Analytical Modeling, Short channel effects (SCEs), SON MOSFET, Two Dimensional Modeling. —
In this paper, a two dimensional analytical model of a fully depleted nano-scale dual material double gate (DMDG) SON MOSFET has been developed and performance comparison is made with single material double gate SON MOSFET. An expression for the electric field has also been developed. It is found that the introduction of the DMDG structure in a fully depleted SON MOSFET leads to reduction of short channel effects due to a step-function in the surface potential profile thereby improving device performance and enhances devices scalability some steps further with the extreme exploitation of the idea, threshold control by means of multiple material gate electrode
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