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International Journal of Scientific and Engineering Research
ISSN Online 2229-5518
ISSN Print: 2229-5518 9    
Website: http://www.ijser.org
scirp IJSER >> Volume 3,Issue 9,September 2012
A simple method for calculation of the bulk modulus of boron-doped diamond
Full Text(PDF, )  PP.111‐114  
Author(s)
Dr. V. Katsika-Tsigourakou
KEYWORDS
— Compressibility, Point defects, Mixed crystals, Elastic properties, Defect volume, Activation energy, Boron-doped diamond
ABSTRACT
Boron-doped diamond undergoes an insulator-metal transition at some critical value (around 2.21 at %) of the dopand concentration. Here, we report a simple method for the calculation of its bulk modulus, based on the thermodynamical model, by Varotsos and Alexopoulos, that has been originally suggested for the interconnection between the defect formation parameters in solids and bulk properties. The results obtained at the doping level of 2.6 at %, which was later improved at the level 0.5 at %, are in agreement wi th the experimental values.
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