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International Journal of Scientific and Engineering Research
ISSN Online 2229-5518
ISSN Print: 2229-5518 9    
Website: http://www.ijser.org
scirp IJSER >> Volume 2, Issue 9, September 2011
Low Temperature Magnetotransport in 2D GaN Quantum Wells
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Arindam Biswas, Aniruddha Ghosal, Hasanujjaman, Sahnawaj Khan
Hall Mobility, Magnetoresistance, Scattering Theory .Bolzman transport equation, 2D quantum wells.
Hall mobility of the two dimensional electron gas in GaN quantum wells are calculated in the temperature range 1K-14K incorporating deformation potential acoustic, piezoelectric, background and remote ionized impurity scatterings. The Boltzmann transport equation is solved by a numerical iterative technique using Fermi-Dirac statistics. The variations of longitudinal magnetoresistivity with magnetic field and temperature agree with the available experimental results at temperature T=1.38 K. The Hall mobility is found to decrease sharply at low magnetic fields and the variation becomes less sensitive to higher field values. Hall mobility at such low temperatures has agreed with the results obtained by other researcher.
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