IJSER Home >> Journal >> IJSER
International Journal of Scientific and Engineering Research
ISSN Online 2229-5518
ISSN Print: 2229-5518 11    
Website: http://www.ijser.org
scirp IJSER >> Volume 2, Issue 11, November 2011
Development of SiC BJT Based PWM Inverter for Renewable Energy Resources
Full Text(PDF, 3000)  PP.  
BJT, inverted sine PWM, SiC, Switching loss and THD
Silicon Carbide (SiC) BJT switch is attractive for inverters because it does not have the thermal runaway and slow switching problems associated with Si BJTs. This paper investigates the potentials of SiC BJT based PWM inverter for renewable energy resources. The static and switching characteristics of SiC BJT are simulated using MATLAB. Comparisons are carried out with a state-of-the-art Si IGBT with the emphasis on total losses. The simulation results are verified with experimental data. It is found that SiC BJT has much smaller conduction and switching losses than the Si IGBT. A prototype of BITSiC1206 BJT inverter switched at 100 kHz has been developed by employing a novel inverted sine carrier PWM technique. This method is compared with the conventional PWM in terms of THD and switching losses. The proposed modulation technique is implemented using a FPGA processor so that better resolution is achieved in the control of inverter output voltage magnitude and it is verified experimentally.
[1] J. Richmond, S.-H. Ryu, M. Das, S. Krishnaswami, S. Hodge, Jr.,A. Agarwal, and J. Palmour, ‚An overview of Cree silicon carbide power devices,‛ in Proc. Power Electron. Transp., 2004, pp. 37–42.

[2] A. K. Agarwal, S.-H. Ryu, J. Richmond, C. Capell, J. Palmour,S. Balachandran, T. P. Chow, B. Geil, S. Bayne, C. Scozzie, and K. A. Jones, ‚Recent progress in SiC bipolar junction transistors,‛ in Proc.Int. Symp. Power Semicond. Devices ICs, 2004, pp. 361–364.

[3] W.V. Muench and P. Hoeck, ‚Silicon carbide bipolar transistor‛,Solid-State Electronics, 1978, Vol. 21, p.479-480.

[4] S. H. Ryu, A. K. Agarwal, R. Singh, and J. W. Palmour, ""1800 V NPN Bipolar Junction Transistors in 4H-SiC"", IEEE Electron Device Letters, Vol. 22, pp.119 -120, March 2001.

[5] B. Ozpineci, L. M. Tolbert, S. K. Islam, and M. Hasanuzzaman, ‚Effects of silicon carbide (SiC) power devices on PWM inverter losses,‛ in Proc.IEEE Ind. Electron. Conf., Nov. 2001, pp. 1061–1066.

[6] Rahman, M.M., and Furukawa, S.: ‘Silicon carbide turns on its power’, IEEE Circuits Devices Mag., 1992,8, p. 22.

[7] Charlotte, J., Burk, C. C., Zhang, A., Callanan, R., Geil B. and Scozzie, C. ‚1200V 4H –SiC bipolar junction transistors with a record beta of 70,‛ in Proc. 49th Electronic Materials Conference, EMC ‘07, Indiana, USA, pp. 90-96,2007.

[8] Gao, Y., Huang, A.Q., Xu, X., Zhong, D., Agarwal, A.K., Krishnaswami, S. and Ryu, S.H. ‚4H-SiC BJT Characterization at high current high voltage‛, in Proc. Power Electronics Specialists Conference, pp. 1-5, 2006.

[9] Y. Tang, J. B. Fedison, and T. P. Chow, ‚High temperature characterization of implanted-emitter 4H-SiC BJT,‛ in Proc. IEEE/Cornell Conf. High Perform. Devices, 2000, pp. 178–181.

[10] K. Sheng, L. C. Yu, J. Zhang, and J. H. Zhao, ‚High temperature characterization of SiC BJTs for power switching applications,‛ Solid State Electron., vol. 50, no. 6, pp. 1073–1079, Jun. 2006.

[11] M. Roschke and F. Schwierz, ‚Electron mobility models for 4H, 6H, and 3C SiC,‛ IEEE Trans. Electron Devices, vol. 48, no. 7, pp. 1442–1447, Jul. 2001.

[12] R.Seyezhai and B.L.Mathur , ‘Performance Evaluation Of Inverted Sine PWM Technique For An Asymmetric Cascaded Multilevel Inverter’, Journal of Theoretical and Applied Information Technology, pp. 92-98,2009.

Untitled Page