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International Journal of Scientific and Engineering Research
ISSN Online 2229-5518
ISSN Print: 2229-5518 5    
Website: http://www.ijser.org
scirp IJSER >> Volume 3,Issue 5,May 2012
Low Leakage Nanoscaled Body on Insulator FinFET with Underlap
Full Text(PDF, )  PP.937-946  
Author(s)
Sarika Bukkawar, Nisha Sarwade
KEYWORDS
—BOI(Body over Insulator)FinFET,BOX(Buried Oxide) DIBL(Drain Induced Barrier Lowering) ,leakage current, short-channel effects (SCEs), silicon-on-insulator (SOI), subthreshold slope(S), underlap length (LUN ) .
ABSTRACT
In this paper a Body over Insulator(BOI) FinFET structure in which channel region insulated from body by buried oxide with undoped underlap is studied . An extensive simulation study and analysis of the effect of underlaps on BOI FinFET has been performed using the TCAD SILVACO (DevEDIT(3D), ATLAS). The simulations have revealed that the BOI FinFET structures with underlaps are more efficient than conventional BOI FinFET as undoped underlap region reduces DIBL, leakage current(IOFF) and improves ION/IOFF ratio. 
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