Etching Effect on Sensing Behavior of CuO:NiO/PS Hydrogen Gas Sensor [ ]


In this paper, thin films of copper oxide nanoparticles mixed with 2% wt of nickel oxide are deposited on glass and porous silicon (PS) substrates with orientation (111) etched at 30 minutes. The current density was varied from (10 to 50) mA/cm2 with a step of 10 utilizing pulsed laser deposition technique for the manufacture of hydrogen gas sensor. The films are annealed in air at 400 °C for two hours. The PL result of PS shows that the peak position is shifted to the higher wavelength region due to increase etching current. On the other hand, the atomic force microscopy shows an increase in average diameter with increasing etching current (10-30) mA then decrease. Moreover, the FTIR spectra of porous silicon exhibit that the pore surface includes a high density of dangling bonds of Si for original impurities such as hydrogen and fluorine, which are residuals from the electrolyte. Finally the sensitivity of the hydrogen gas sensor are increased with increasing operating temperature.