Author Topic: Mn DOPED SnO2 Semiconducting Magnetic Thin Films  (Read 2778 times)

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Mn DOPED SnO2 Semiconducting Magnetic Thin Films
« on: April 23, 2011, 05:51:51 pm »
Mn DOPED SnO2 Semiconducting Magnetic Thin Films Prepared by Spray Pyrolysis Method
Author : K.Vadivel, V.Arivazhagan, S.Rajesh
International Journal of Scientific & Engineering Research, IJSER - Volume 2, Issue 4, April-2011
ISSN 2229-5518
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Abstract -- Semiconducting magnetic thin films of SnO2 doped with Mn was prepared by spray pyrolysis method. The polycrystalline nature of the films with tetragonal structure was observed from X-ray Diffractometer. The calculated crystalline size was 16-22 nm and the lattice constant is a=4.73A◦ and c=3.17A◦. The compositional studies give the weight percentage of the used materials. The absorption edge starts with 294 nm and rise in transmittance spectra shows the nanocrystalline effect of as deposited films. The calculated band gap from the absorption coefficient is 3.25 eV which greater than the bulk band gap of Tin oxide. The electrical properties of the prepared films also reported in this paper.
Keywords-- Mn doped SnO2, Spray Pyrolysis, XRD, UV, Electrical studies.

THE study of SnO2 transparent conducting oxide thin films are of great interest due to its unique attractive properties like high optical transmittance, uniformity, nontoxicity, good electrical, low resistivity, chemical inertness, stability to heat treatment, mechanical hardness, Piezoelectric behavior and its low cost. SnO2 thin films have vast applications as window layers, heat reflectors in solar cells, flat panel display, electro-chromic devices, LEDS, liquid crystal displays, invisible security circuits, various gas sensors etc. Undoped and Cu, Fe and Mn doped SnO2 thin films have been prepared by vapor deposition technique and reported that SnO2 belongs to n-type semiconductor with a direct optical band gap of about 4.08 eV [6]. To improve the quality of the films as well as the physical and chemical properties, the addition of some metal ions as impurities is expected to play an important role in changing the charge carriers concentration of the metal oxide matrix, catalytic activity, the surface potential, the phase composition, the size of crystallites, and so on [8- 10]. It is expected that various concentration of Mn in SnO2 may affect the structural, optical  and magnetic properties of the films. From bang gap engineering point of view, suitable band gap is essential for the fabrication of optical devices. So far our knowledge is concerned there are very few reports available on the deposition of Mn doped SnO2 thin films by spray pyrolysis method. In considering the importance of these materials in the field of magnetic materials, we have prepared Mn doped SnO2 films using a simple and locally fabricated spray pyrolysis system relatively at the temperature of 450C.
Mn doped SnO2 thin films were prepared by spray pyrolysis method. Mn doped SnO2 thin films were prepared by spray pyrolysis method. The starting  materials  were  SnCl4.5H2O  for  Tin  and  Mn(CHOO3)2.4H2O  for  Manganese.The concentration of 0.5m of Stannous chloride and 0.1m of Manganese acetate was taken in two different beakers with double distilled water.  Then  98%  of  Stannous  chloride  solution  and  2%  of manganese  acetate  solution was mixed  together and  stirred using magnetic stirrer for 4  hours and allowed  to aging  for ten days. The clear solution of the mixer was taken for film preparation by spray pyrolysis method. The temperature of the substrate in this method for preparing nanocrystalline films plays an important role. Here the temperature of the substrate kept at 450◦C and the solution was sprayed using atmospheric air as carrier gas. Then the film was allowed to natural cool down. The structural studies on as deposited manganese doped tin oxide thin films were analyzed using X-Ray diffractometer (Shimadzu XRD-6000). Using EDAX (JSM 6390) the elemental composition of the films was carried out. The optical and electrical properties of the films done by UV-Vis spectrometer (Jasco-570 UV/VIS/ NIR) and Hall (Ecopia HMS-3000) measurement system.

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