Low Temperature Magnetotransport in 2D GaN Quantum Wells
|
Full Text(PDF, 3000) PP.
|
|
Author(s) |
Arindam Biswas, Aniruddha Ghosal, Hasanujjaman, Sahnawaj Khan |
|
KEYWORDS |
Hall Mobility, Magnetoresistance, Scattering Theory .Bolzman transport equation, 2D quantum wells.
|
|
ABSTRACT |
Hall mobility of the two dimensional electron gas in GaN quantum wells are calculated in the temperature range 1K-14K incorporating deformation potential acoustic, piezoelectric, background and remote ionized impurity scatterings. The Boltzmann transport equation is solved by a numerical iterative technique using Fermi-Dirac statistics. The variations of longitudinal magnetoresistivity with magnetic field and temperature agree with the available experimental results at temperature T=1.38 K. The Hall mobility is found to decrease sharply at low magnetic fields and the variation becomes less sensitive to higher field values. Hall mobility at such low temperatures has agreed with the results obtained by other researcher.
|
|
References |
|
[1] K. S. Cho, T.-Y. Huang, H. S. Wang, M.-G. Lin, T.-M. Chen, C.-T.
Liang, Y. F. Chen and I.Lo, “Zero-field spin splitting in modulation-
doped AlGaN∕ GaN two-dimensional electron systems ”
Appl. Phys. Lett. 86, 222102 (2005).
[2] J. R. Juang, D. R. Hang, T.-Y. Huang, W. K. Hung, Y. F. Chen, G.
- H. Kim, M.-G. Lin, T. M. Chen, C.-T. Liang, Y. Lee, J. H. Lee
and J. H. Lee,” Conventional and microwave-modulated Shubni
kov–de Haas oscillations in GaN electron systems”
Physica E 21,631 (2004).
[3] S.-K. Lin, K.-T. Wu, C.-P. Huang, C.-T. Liang, Y. H. Chang, Y. F.
Chen, P. H. Chang, N. C. Chen,C. A. Chang, H. C. Peng, C. F
. Shin, K. S. Liu and T. Y. Lin” Electron transport in In-rich InxGa1-
xN films” J. Appl. Phys. 97, 046101 (2005).
[4] J.-H. Chen, J.-Y. Lin, J.-K. Tsai, Hun Park, G.-H. Kim, Jungseok
Ahn, H.-I. Cho, E.-J. Lee, J.-H. Lee, C.-T. Liang and Y. F. Chen,
Experimental evidence for Drude-Boltzmann-like transport in a
two-dimensional electron gas in an AlGaN/GaN heterostructure
Phys. Stat. Sol. (c), 1 (2006).
[5] J.-H. Chen, J.-Y. Lin, J.-K. Tsai, Hun Park, G.-H. Kim, Jungseok
Ahn, H.-I. Cho, E.-J. Lee, J.-H. Lee, C.-T. Liang and Y. F. Chen, J.
Korean Phys. Soc. 48,” Experimental Evidence for Drude-
BoBoltzmann-Like Transport in a Two-Dimensional Electron Gas in
an an AlGaN/GaN Heterostructure ” 1539(2006).
[6] K.-T. Wu, P. H. Chang, S. T. Lien, N. C. Chen, C.-A. Chang, C. F.
Shin, W. C. Lien, Y. H.Wu, S.-C. Chen,Y. H. Chang and C.-T.
Liang,” Magnetotransport Measurements on an AlGaN/GaN
Two-Dimensional Electron System” Physica E 32, 566 (2006).
[7] C.-A. Chang, S.-T. Lien, C.-H. Liu, C.-F. Shih, N.-C. Chen, P.-H.
Chang, H.-C. Peng, T.-Y. Tang, W.-C. Lien, Y.-H. Wu, K.-T. Wu,
J.-W. Chen, C.-T. Liang,Y.-F. Chen, T.-U. Lu and T.-Y. Lin” Effect
of Buffer Layers on Electrical, Optical and Structural Properties of
AlGaN/GaN Heterostructures Grown on Si”, Jpn. J. Appl.
Phys.45, 2516 (2006).
[8] C. F. Huang, Y. H. Chang, H. H. Cheng, C.-T. Liang and G. J.
Hwang,” A study on the universality of the magnetic-fieldinduced
phase transitions in the two-dimensional electron
system in an AlGaAs/GaAs heterostructure” Physica E 22, 232
(2004).
[9] T.-Y. Huang, J. R. Juang, C. F. Huang, G.-H. Kim, C. P. Huang,
C.-T. Liang, Y. H. Chang, Y. F. Chen, Y. Lee and D. A. Ritchie,
“On the low-field insulator-quantum Hall conductor
transitions”Physica E 22, 240 (2004).
[10] T.-Y. Huang, Y.-M. Cheng, C.-T. Liang, C. F. Huang,Y. H.
Chang and Y. F. Chen,” Magnetic-field-induced phase
transitions in a Si/SiGe hole system” Physica E 22, 244 (2004).
[11] G.-H. Kim, C.-T. Liang, C. F. Huang, J. T. Nicholls, D. A.
Ritchie, P. S. Kim, C. H. Oh, J. R. Juang andY. H. Chang,” From
localization to Landau quantization in a two-dimensional GaAs
electron system containing self-assembled InAs quantum dots
”, Phys. Rev. B 69, 073311 (2004).
[12] R. B. Laughlin, Phys. Rev. Lett. 52,” Levitation of Extended
State Bands in a Strong magnetic Field”, 2304 (1984).
[13] D. Khmelnitskii,”Quantum hall effect and additional
soscillations of conductivity in weak magnetic fields
” Phys. Lett. A 106, 182 (1984).
[14] Dyson A.; Ridley B.K.,″High- field transport and terahertz
generation in GaN″. Journal of Applied Physics, Vol. 104, Dec.
2008, p 113709-113709-6.
[15] Chu R.M.; Zheng Y.D; Zhou Y.G.; Gu S.L.; Shen B.; Zhang R.,
″Designing two-dimensional electron gas in
AlGaN/InGaN/GaN heterostructures through the incorporated
InGaN layer″. Journal of optical materials, 23, 207 (2003).
[16] Lee J.; Spector H.N. ; Arora V.K., ″Impurity scattering limited
mobility in a quantum well heterojunction″. Journal of Applied
Physics, Vol. 54, 1983 , p. 6995.
[17]. Rode D.L.; Gaskill D.K.; ″Electron Hall mobility of n-GaN″.
Journal of Applied Physics Letters, Vol. 66, April 1995, p. 1972
- 1973.
[18] Biswas A and Ghosal A, “Hole Transport in CdSe Single
Quantum Wells at Low Temperatures”, Journal of Electron
Devices, Vol 10, pp 444-447(2011).
[19] Lin Jyun-Ying; Chen Jing-Han; Kim Gil-Ho; Park Hun; Youn
D.H.; Jeon Chang Min; Baik Jeong Min; Lee Jong-Lam; Liang
C.T.; Chen Y.F., ″Magnetotransport measurements on an
AlGaN/GaN two-dimensional electron system″. Journal of
Korean Physical Society, Vol. 49, 2006, p. 1130-1135.
[20] Ghosal A.; Chattopadhyay D., ″Low-temperature electronic
transport in CdSe single quantum wells″.Indian Journal of
Physics., Vol. 78 , No.9, 2004, p. 915 -917.
|
|
|