Recent advancements in the electronic communication request the need for high efficiency, as
such there are needs for high efficiency wideband Radio Frequency Power Amplifier (RFPA) for
future application in the communication industry. From the technological point of view, Gallium
Nitride High Electrons Mobility Transistors (GaN HEMT) appear to be one of the most promising
technologies, especially due to its capability for reduce size, resulting in minor weight and
parasitic effects. On the other side, circuit design scientific community has shown an increasing
interest in the Class J RFPA: it derives from the Class B RFPA, and in particular its
implementation with GaN can be made useful to achieved wider bandwidth RFPA. In this
framework, this thesis work has started from the Class J waveforms analysis. In order to achieve
this task, theoretical basis of the Class J have been exploited and Matlab was used to analyze
the waveforms of the Class J. To prove the equivalence of the Class J to the Class B in terms of performances, and aiming at using electronic components to prove the reality of this emerging
device, Microwave Office (MWO) simulations were performed starting with an ideal model and
passing on to more real structures.
Finally, after performing these analysis and simulations, the Class J was proven to have similar
drain efficiency and output power to that of the Class B.
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